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| S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW) ID 18A R DS (ON) Max S uper high dense cell design for low R DS (ON). 40 @ V G S = 4.5V 60 @ V G S = 2.5V R ugged and reliable. TO-220 and TO-263 P ackage. D D G D S G S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 G S ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ TJ=25 C S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 18 45 15 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T P /B 3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250uA VGS =4.5V, ID = 6.0A VGS =2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 5.0A Min Typ C Max Unit 20 1 100 0.6 1 25 40 20 17 800 205 165 1.7 40 60 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm RGEN = 6 ohm VDS=10V,ID =6A,VGS=10V VDS=10V,ID =6A,VGS=4.5V VDS =10V, ID = 6A, VGS =10V 2 21.5 8.5 39.5 20 14.7 11.6 2.2 3.6 ns ns ns ns nC nC nC nC S TP/B3055L2 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol b Condition VGS = 0V, Is =15A Min Typ Max Unit 1.1 1.3 V C DRAIN-SOURCE DIODE CHARACTERISTICS VSD Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 VGS=10,9,8,7,6,5,4,3V 25 25 C 20 -55 C 16 ID, Drain Current(A) ID, Drain Current (A) 12 15 Tj=125 C 8 VGS=2V 4 0 10 5 0 0.0 0 1 2 3 4 5 6 0.6 1.2 1.8 2.4 3.0 3.6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 2.2 1500 1200 900 600 300 Crss 0 0 2 4 6 8 10 Figure 2. Transfer Characteristics VGS=4.5V ID=6A C, Capacitance (pF) RDS(ON), On-Resistance Normalized 12 1.8 1.4 1.0 0.6 0.2 0 Ciss Coss -50 -25 0 25 50 75 100 125 Tj( C) VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 S T P /B 3055L2 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 24 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 16 12 8 4 V DS =10V 0 0 5 10 15 20 25 Is , S ource-drain current (A) 20 10 1 0.4 T J =25 C 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =10V ID=6A 10 RD ON S( )L im it 10 10 ms s 0m 11 1s DC 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T P /B 3055L2 4 V IN D VG S R GE N G 90% V DD ton RL V OUT V OUT 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.01 1. 2. 3. 4. 1 10 100 P DM t1 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T C = P * R cJ C (t) Duty C ycle, D=t1/t2 1000 10000 0.1 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T P /B 3055L2 S T P /B 3055L2 TO-263 Tape and Reel Data TO-263 Carrier Tape UNIT:P PACKAGE TO-252 (16 P ) A0 6.80 O 0.1 B0 10.3 O 0.1 K0 2.50 O 0.1 D0 r 2 D1 r 1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O 0.15 P0 8.0 O 0.1 P1 4.0 O 0.1 P2 2.0 O 0.15 T 0.3 O 0.05 TO-263 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r 330 O 0.5 N r 97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r 13.0 + 0.5 - 0.2 K 10.6 S 2.0 O 0.5 G R V 7 |
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